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STD18N65M5 |
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| Part Number | STD18N65M5 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STD18N65M5 ·FEATURES ·Higher VDSS rating ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi... |
| Features |
·Higher VDSS rating ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ （ TJ=175℃） TC=125℃ Drain Current-Single Pulsed ±25 15 9.4 60 PD Total Dissipation @TC=25℃ 110 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL P... |
| Document |
 STD18N65M5 Data Sheet
PDF 203.84KB |
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Desde 2024. D4U Semiconductor.
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