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IPD60R380E6 |
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| Part Number | IPD60R380E6 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD60R380E6 ·FEATURES ·With TO-252(DPAK) packaging ·With low gate drive requirements ·Very high commutation ruggedness ·Extremely high frequenc... |
| Features |
·With TO-252(DPAK) packaging ·With low gate drive requirements ·Very high commutation ruggedness ·Extremely high frequency operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·LCD&PDP TV ·PC silverbox ·UPS and solar ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM PD Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed Total Dissipation ±20 10.6 6.7 30 83 Tj Operating Junction Temperature -55~15... |
| Document |
 IPD60R380E6 Data Sheet
PDF 206.43KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD60R380E6 |
Infineon Technologies |
MOSFET |
|
| 2 | IPD60R380C6 |
Infineon Technologies |
MOSFET |
|
| 3 | IPD60R380C6 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPD60R380P6 |
Infineon |
MOSFET |
|
| 5 | IPD60R380P6 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IPD60R385CP |
Infineon Technologies |
Power Transistor |
|
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