IPB65R110CFD |
Part Number | IPB65R110CFD |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-... |
Features |
·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPB65R110CFD ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 31.2 19.7 99.6 PD Total Dissipation 277.8 Tj Operating Junction Temperature -55~150 Tst... |
Document |
IPB65R110CFD Data Sheet
PDF 200.85KB |
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