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IPB020N10N5 |
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| Part Number | IPB020N10N5 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot var... |
| Features |
·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPB020N10N5 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 176 135 704 PD Total Dissipation 375 Tj Operating Junction Temperature -55~175 Tstg Storage Tempe... |
| Document |
 IPB020N10N5 Data Sheet
PDF 200.11KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB020N10N5 |
Infineon |
MOSFET |
|
| 2 | IPB020N10N5LF |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPB020N10N5LF |
Infineon |
MOSFET |
|
| 4 | IPB020N08N5 |
Infineon |
MOSFET |
|
| 5 | IPB021N06N3 |
Infineon |
Power Transistor |
|
| 6 | IPB021N06N3G |
Infineon Technologies |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
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