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IPAN60R800CE |
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| Part Number | IPAN60R800CE |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations fo... |
| Features |
·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPAN60R800CE ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 8.4 5.3 15.7 PD Total Dissipation @TC=25℃ 27 Tj Max. Operating Junction Temperature 150 Ts... |
| Document |
 IPAN60R800CE Data Sheet
PDF 197.37KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPAN60R800CE |
Infineon |
MOSFET |
|
| 2 | IPAN60R650CE |
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MOSFET |
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| 3 | IPAN60R650CE |
INCHANGE |
N-Channel MOSFET |
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| 4 | IPAN65R650CE |
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| 5 | IPAN50R500CE |
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MOSFET |
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| 6 | IPAN50R500CE |
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N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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