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IPA083N10N5 |
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| Part Number | IPA083N10N5 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA083N10N5 ·FEATURES ·With To-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum L... |
| Features |
·With To-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 44 32 176 PD Total Dissipation @TC=25℃ 36 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTER... |
| Document |
 IPA083N10N5 Data Sheet
PDF 196.98KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPA083N10N5 |
Infineon |
MOSFET |
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| 2 | IPA086N10N3 |
INCHANGE |
N-Channel MOSFET |
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| 3 | IPA086N10N3 |
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MOSFET |
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| 4 | IPA086N10N3G |
Infineon Technologies |
MOSFET |
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| 5 | IPA028N08N3G |
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Power-Transistor |
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| 6 | IPA029N06N |
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|
Desde 2024. D4U Semiconductor.
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