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IPA80R1K0CE |
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| Part Number | IPA80R1K0CE |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations fo... |
| Features |
·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPA80R1K0CE ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 5.7 3.6 18 PD Total Dissipation @TC=25℃ 32 Tj Max. Operating Junction Temperature 150 Tstg ... |
| Document |
 IPA80R1K0CE Data Sheet
PDF 197.27KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPA80R1K0CE |
Infineon Technologies |
MOSFET |
|
| 2 | IPA80R1K2P7 |
Infineon |
Power-Transistor |
|
| 3 | IPA80R1K4CE |
Infineon Technologies |
MOSFET |
|
| 4 | IPA80R1K4CE |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPA80R1K4P7 |
Infineon |
MOSFET |
|
| 6 | IPA80R280P7 |
Infineon |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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