IPA65R099C6 |
Part Number | IPA65R099C6 |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations fo... |
Features |
·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPA65R099C6 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 38 24 115 PD Total Dissipation @TC=25℃ 35 Tj Max. Operating Junction Temperature 150 Tstg ... |
Document |
IPA65R099C6 Data Sheet
PDF 197.11KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPA65R099C6 |
Infineon |
MOSFET | |
2 | IPA65R095C7 |
Infineon |
MOSFET | |
3 | IPA65R095C7 |
INCHANGE |
N-Channel MOSFET | |
4 | IPA65R045C7 |
Infineon |
MOSFET | |
5 | IPA65R045C7 |
INCHANGE |
N-Channel MOSFET | |
6 | IPA65R065C7 |
Infineon |
MOSFET |