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IPA60R299CP |
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| Part Number | IPA60R299CP |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minim... |
| Features |
·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPA60R299CP ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 11 7 34 PD Total Dissipation @TC=25℃ 33 Tj Max. Operating Junction... |
| Document |
 IPA60R299CP Data Sheet
PDF 197.33KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPA60R299CP |
Infineon Technologies |
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| 2 | IPA60R230P6 |
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| 3 | IPA60R230P6 |
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| 4 | IPA60R250CP |
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| 5 | IPA60R250CP |
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| 6 | IPA60R280C6 |
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Desde 2024. D4U Semiconductor.
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