FMW30N60S1HF |
Part Number | FMW30N60S1HF |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMW30N60S1HF ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching loss ·Low on-state resistance ·Easy to drive ·10... |
Features |
·With TO-247 packaging ·With low gate drive requirements ·Low switching loss ·Low on-state resistance ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 30 19 90 PD Total Dissipation 220 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ... |
Document |
FMW30N60S1HF Data Sheet
PDF 208.98KB |
Similar Datasheet
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