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FMR09N90E |
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| Part Number | FMR09N90E |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMR09N90E ·FEATURES ·With TO-3PML package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot... |
| Features |
·With TO-3PML package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 9 IDM Drain Current-Single Pulsed 36 PD Total Dissipation @TC=25℃ 100 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ... |
| Document |
 FMR09N90E Data Sheet
PDF 205.80KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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