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FDP053N08B |
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| Part Number | FDP053N08B |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d... |
| Features |
·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications INCHANGE Semiconductor FDP053N08B ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 120 82.5 480 PD Total Dissipation 146 Tj Operating Junction Temperature -55~175 ... |
| Document |
 FDP053N08B Data Sheet
PDF 202.78KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDP053N08B |
ON Semiconductor |
N-Channel MOSFET |
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| 2 | FDP053N08B |
Fairchild Semiconductor |
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| 3 | FDP050AN06A0 |
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| 4 | FDP050AN06A0 |
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| 5 | FDP054N10 |
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| 6 | FDP054N10 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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