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FDD3682 |
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| Part Number | FDD3682 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDD3682 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤36mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perf... |
| Features |
·Static drain-source on-resistance: RDS(on)≤36mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC-DC Converters and off-line UPS ·High Voltage Synchronous Rectifier ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 32 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 95 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS ... |
| Document |
 FDD3682 Data Sheet
PDF 220.81KB |
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Desde 2024. D4U Semiconductor.
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