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FCH067N65S3 |
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| Part Number | FCH067N65S3 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d... |
| Features |
·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor FCH067N65S3 ·APPLICATIONS ·PFC stages ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 44 28 110 PD Total Dissipation 312 Tj Operating Junction Temperature -55~150 Tstg Storage T... |
| Document |
 FCH067N65S3 Data Sheet
PDF 208.79KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FCH067N65S3 |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | FCH067N65S3 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FCH06A09 |
Nihon Inter Electronics |
Schottky barrier Diode |
|
| 4 | FCH06A10 |
Kyocera |
Schottky Barrier Diode |
|
| 5 | FCH06A10 |
Nihon Inter Electronics |
Schottky barrier Diode |
|
| 6 | FCH023N65S3 |
ON Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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