2SK2601 |
Part Number | 2SK2601 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2601 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-L... |
Features |
·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 40 PD Total Dissipation 125 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS S... |
Document |
2SK2601 Data Sheet
PDF 204.61KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK260 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK2601 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK2602 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK2603 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK2604 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK2605 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |