IPA60R125C6 |
Part Number | IPA60R125C6 |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R125C6 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum L... |
Features |
·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 30 19 89 PD Total Dissipation @TC=25℃ 34 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V... |
Document |
IPA60R125C6 Data Sheet
PDF 201.59KB |
Similar Datasheet
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1 | IPA60R125C6 |
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2 | IPA60R125CP |
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3 | IPA60R125CP |
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