STD10NM60N |
Part Number | STD10NM60N |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STD10NM60N ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minim... |
Features |
·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ ( TJ=175℃) TC=125℃ Drain Current-Single Pulsed ±25 10 5 32 PD Total Dissipation @TC=25℃ 70 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ... |
Document |
STD10NM60N Data Sheet
PDF 204.13KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STD10NM60N |
ST Microelectronics |
N-Channel Power MOSFET | |
2 | STD10NM60ND |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STD10NM65N |
INCHANGE |
N-Channel MOSFET | |
4 | STD10NM65N |
STMicroelectronics |
N-Channel MOSFET | |
5 | STD10N10 |
SamHop Microelectronics |
N-Channel MOSFET | |
6 | STD10N20 |
SamHop Microelectronics |
N-Channel MOSFET |