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SSS7N60B |
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| Part Number | SSS7N60B |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SSS7N60B ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-... |
| Features |
·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 7.0 4.4 28 PD Total Dissipation @TC=25℃ 48 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V... |
| Document |
 SSS7N60B Data Sheet
PDF 196.76KB |
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Desde 2024. D4U Semiconductor.
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