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EPC2014 |
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| Part Number | EPC2014 |
| Manufacturer | EPC |
| Description | eGaN® FET DATASHEET EPC2014 – Enhancement Mode Power Transistor VDSS , 40 V RDS(ON) , 16 mW ID , 10 A NEW PRODUCT EPC2014 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers... |
| Features |
G Storage Temperature
-40 to 150 ˚C
-40 to 150
PARAMETER
TEST CONDITIONS
MIN
Static Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 125 µA
40
IDSS
Drain Source Leakage
VDS = 32 V, VGS = 0 V
Gate-Source Forward Leakage
IGSS
Gate-Source Reverse Leakage
VGS = 5 V VGS = -5 V
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 2 mA
0.7
RDS(ON)
Drain-Source On Resistance
VGS = 5 V, ID = 5 A
Source-Drain Characteristics (TJ= 25˚C unless otherwise stated)
VSD
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V, T = 25˚C
IS = 0.5 A,... |
| Document |
 EPC2014 Data Sheet
PDF 1.06MB |
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