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EPC2012 |
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| Part Number | EPC2012 |
| Manufacturer | EPC |
| Description | eGaN® FET DATASHEET EPC2012 – Enhancement Mode Power Transistor VDSS , 200 V RDS(ON) , 100 mW ID , 3 A NEW PRODUCT EPC2012 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafer... |
| Features |
atic Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 60 µA
200
IDSS
Drain Source Leakage
VDS = 160 V, VGS = 0 V
Gate-Source Forward Leakage
IGSS
Gate-Source Reverse Leakage
VGS = 5 V VGS = -5 V
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
0.7
RDS(ON)
Drain-Source On Resistance
VGS = 5 V, ID = 3 A
Source-Drain Characteristics (TJ= 25˚C unless otherwise stated)
VSD
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V, T = 25˚C IS = 0.5 A, VGS = 0 V, T = 125˚C
All measurements were done with substrate shorted to source.
... |
| Document |
 EPC2012 Data Sheet
PDF 1.54MB |
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