EPC2016C |
Part Number | EPC2016C |
Manufacturer | EPC |
Description | eGaN® FET DATASHEET EPC2016C – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 16 mΩ ID , 18 A D G S EPC2016C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron ... |
Features |
-to-Case
2
RθJB Thermal Resistance, Junction-to-Board
4
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
69
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
PARAMETER
Static Characteristics (TJ = 25°C unless otherwise stated) TEST CONDITIONS
BVDSS IDSS
Drain-to-Source Voltage Drain-Source Leakage
VGS = 0 V, ID = 300 μA VGS = 0 V, VDS = 80 V
Gate-to-Source Forward Leakage IGSS
Gate-to-Sou... |
Document |
EPC2016C Data Sheet
PDF 0.96MB |
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