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EPC1007 |
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| Part Number | EPC1007 |
| Manufacturer | EPC |
| Description | DATASHEET EPC1007 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 30 mW ID , 6 A EPC1007 EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard... |
| Features |
C unless otherwise stated)
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 75 µA
100
IDSS
Drain Source Leakage
VDS = 80 V, VGS = 0 V
Gate-Source Forward Leakage
IGSS
Gate-Source Reverse Leakage
VGS = 5 V VGS = -5 V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1.2 mA
0.7
RDS(ON)
Drain-Source On Resistance
VGS = 5 V, ID = 6 A
Dynamic Characteristics (TJ= 25˚C unless otherwise stated)
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
QG
Total Gate Charge (VGS = 5 V)
QGD
Gate-to-drain Charge
QGS
Gate-to Source Charge
QOSS
Output Charg... |
| Document |
 EPC1007 Data Sheet
PDF 892.51KB |
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Desde 2024. D4U Semiconductor.
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