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EPC2019 |
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| Part Number | EPC2019 |
| Manufacturer | EPC |
| Description | eGaN® FET DATASHEET EPC2019 – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 42 mΩ max ID , 8.5 A D G S EPC2019 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electr... |
| Features |
tage VGS Gate-to-Source Voltage
6 V
-4
TJ Operating Temperature TSTG Storage Temperature
-40 to 150 °C
-40 to 150
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC Thermal Resistance, Junction-to-Case
2.7
RθJB Thermal Resistance, Junction-to-Board
7.5
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
72
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
PARAMETER
Static Characteristics (T... |
| Document |
 EPC2019 Data Sheet
PDF 1.23MB |
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