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NE5500179A |
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| Part Number | NE5500179A |
| Manufacturer | NEC |
| Description | The NE5500179A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 4.8 V GSM1800 and GSM1900 handsets. Dies are manufactured using NEC's NEWMOS technology (... |
| Features |
• HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm • HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm • HIGH LINEAR GAIN: 14 dB TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 0 dBm • SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX • SINGLE SUPPLY: 3.0 to 6.0 V OUTLINE DIMENSIONS (Units in mm) Gate PACKAGE OUTLINE 79A 4.2 Max Source Drain Gate 1.5 ± 0.2 Source Drain 1.2 Max 0.8 ± 0.15 4.4 Max 1.0 Max 5.7 Max 0.6 ± 0.15 0.4 ± 0.15 5.7 Max 0.8 Max 3.6 ± 0.2 Bottom View 0.2 ± 0.1 0.9 ± 0.2 DESCRIPT... |
| Document |
 NE5500179A Data Sheet
PDF 40.73KB |
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