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CNY21N |
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| Part Number | CNY21N |
| Manufacturer | TEMIC |
| Description | The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one leadframe in ... |
| Features |
According to VDE 0884
D Rated impulse voltage (transient overvoltage)
VIOTM = 8 kV peak
D Isolation test voltage (partial discharge test voltage)
Vpd = 2.8 kV peak
D Rated isolation voltage (RMS includes DC)
VIOWM = 1000 VRMS (1450 V peak)
D Rated recurring peak voltage (repetitive)
VIORM = 1000 VRMS
D Creeping current resistance according to
VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275
D Thickness through insulation > 3 mm D Isolation materials according to UL 94 D Pollution degree 2 (DIN/VDE 0110) D Climatic classification 55/085/21 (IEC 68 part 1) D Further approvals: BS 415, BS... |
| Document |
 CNY21N Data Sheet
PDF 91.20KB |
Similar Datasheet
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|---|---|---|---|---|
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| 2 | CNY21Exi |
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| 3 | CNY28 |
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| 4 | CNY29 |
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| 5 | CNY17 |
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| 6 | CNY17 |
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|
Desde 2024. D4U Semiconductor.
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