MRF6S21140HR3 NXP FET, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

MRF6S21140HR3

Click to view a larger image

Part Number	MRF6S21140HR3
Manufacturer	NXP (https://www.nxp.com/)
Description	Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 ...
Features	• Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF6S21140H Rev. 5, 2/2010 MRF6S21140HR3 MRF6S21140HSR3 2110--2170 MHz, 30 W AVG., 28 V 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465B--03, STYLE 1 NI--880 MRF6S21140HR3 CASE 465C--02, STYLE 1 NI--880S MRF6S21140HSR3 Table 1. Maximum Ratings Rating Symbol Va...
Document	MRF6S21140HR3 Data Sheet PDF 876.77KB

No.	Parte #	Fabricante	Descripción
1	MRF6S21140HSR3	NXP	RF Power FET
2	MRF6S21100HR3	Freescale Semiconductor	RF Power Field Effect Transistors
3	MRF6S21100HSR3	Freescale Semiconductor	RF Power Field Effect Transistors
4	MRF6S21100NBR1	Freescale Semiconductor	RF Power Field Effect Transistors
5	MRF6S21100NR1	Freescale Semiconductor	RF Power Field Effect Transistors
6	MRF6S21050LR3	Freescale Semiconductor	RF Power Field Effect Transistors