MRF6V2010N NXP FET, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

MRF6V2010N

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Part Number	MRF6V2010N
Manufacturer	NXP (https://www.nxp.com/)
Description	NXP Semiconductors Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies...
Features	 Characterized with series equivalent large--signal impedance parameters  Qualified up to a maximum of 50 VDD operation  Integrated ESD protection  225C capable plastic package Document Number: MRF6V2010N Rev. 6, 9/2016 MRF6V2010N MRF6V2010NB MRF6V2010GN 10--450 MHz, 10 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs TO--270--2 PLASTIC MRF6V2010N TO--272--2 PLASTIC MRF6V2010NB TO--270G--2 PLASTIC MRF6V2010GN Gate 2 1 Drain (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections  2007 –2008, 2010, 2016 NXP B.V. RF De...
Document	MRF6V2010N Data Sheet PDF 1.42MB

No.	Parte #	Fabricante	Descripción
1	MRF6V2010GN	NXP	RF Power FET
2	MRF6V2010NB	NXP	RF Power FET
3	MRF6V2010NBR1	Freescale Semiconductor	RF Power Field Effect Transistor
4	MRF6V2010NR1	Freescale Semiconductor	RF Power Field Effect Transistor
5	MRF6V2150N	Motorola Semiconductor	RF Power Field Effect Transistor
6	MRF6V2150NB	Motorola Semiconductor	RF Power Field Effect Transistor