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2N4987 |
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| Part Number | 2N4987 |
| Manufacturer | NTE |
| Description | The 2N4987 is a planar monolithic silicon integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch a... |
| Features |
. . 1A Peak Non−Recurrent Forward Current (10s pulse width) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A DC Forward Anode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175mA DC Gate Current (Note 1, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Junction Temperature Range . . . . . . . . . . .... |
| Document |
 2N4987 Data Sheet
PDF 62.05KB |
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Desde 2024. D4U Semiconductor.
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