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F12-25R12KT4G |
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| Part Number | F12-25R12KT4G |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F12-25R12KT4G EconoPACK™3ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode EconoPACK™3modulewithtrench/fiel... |
| Features |
A, VGE = 15 V
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Gate-Schwellenspannung Gatethresholdvoltage
IC = 0,80 mA, VCE = VGE, Tvj = 25°C
Gateladung Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand Internalgateresistor
Tvj = 25°C
Eingangskapazität Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, ... |
| Document |
 F12-25R12KT4G Data Sheet
PDF 504.60KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F1200A |
Diotec |
Fast Efficient Rectifier Diodes |
|
| 2 | F1200A |
Semikron |
High efficiency fast silicion rectifier diode |
|
| 3 | F1200A |
EIC |
FAST RECOVERY RECTIFIER DIODES |
|
| 4 | F1200B |
Diotec |
Fast Efficient Rectifier Diodes |
|
| 5 | F1200B |
Semikron |
High efficiency fast silicion rectifier diode |
|
| 6 | F1200D |
Diotec |
Fast Efficient Rectifier Diodes |
|
Desde 2024. D4U Semiconductor.
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