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FP10R12W1T4_B11 |
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| Part Number | FP10R12W1T4_B11 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP10R12W1T4_B11 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspa... |
| Features |
= VGE, Tvj = 25°C
Gateladung Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand Internalgateresistor
Tvj = 25°C
Eingangskapazität Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload
IC = 10 A, VCE = 600 V VGE ... |
| Document |
 FP10R12W1T4_B11 Data Sheet
PDF 633.98KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | FP10R12W1T4_B3 |
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IGBT |
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| 2 | FP10R12W1T4P |
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| 3 | FP10R12W1T4P_B11 |
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| 4 | FP10R12W1T4 |
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| 5 | FP10R12W1T7 |
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| 6 | FP10R12W1T7_B11 |
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Desde 2024. D4U Semiconductor.
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