Busque con el número de pieza junto con el fabricante o la descripción
IRGB4061DPbF |
Click to view a larger image
| Part Number | IRGB4061DPbF |
| Manufacturer | International Rectifier |
| Description | PD - 97189B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS sh... |
| Features |
• Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode • Tight parameter distribution • Lead Free Package C G E n-channel IRGB4061DPbF VCES = 600V IC = 18A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses •... |
| Document |
 IRGB4061DPbF Data Sheet
PDF 406.94KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRGB4060DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRGB4062DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRGB4064DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRGB4065PBF |
International Rectifier |
IGBT |
|
| 5 | IRGB4045DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRGB4055PBF |
International Rectifier |
PDP TRENCH IGBT |
|
Desde 2024. D4U Semiconductor.
|