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IKB30N65ES5 |
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| Part Number | IKB30N65ES5 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | C C G E Type IKB30N65ES5 G E Package PG-TO263-3 Marking K30EES5 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2... |
| Features |
• VCE = 650 V • IC = 30 A • High speed smooth switching device for hard & soft switching • Very low V CEsat, 1.35 V at nominal current • 650 V breakdown voltage • Low gate charge QG • IGBT co-packed with full rated current RAPID 1 fast antiparallel diode • Maximum junction temperature Tvjmax = 175°C • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Potential applications • Solar string inverter • Solar micro inverter • Industrial SMPS • Industrial UPS • Welding • Energy storage • Charger Product validation • Qualified for indust... |
| Document |
 IKB30N65ES5 Data Sheet
PDF 1.37MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IKB30N65EH5 |
Infineon |
IGBT |
|
| 2 | IKB01N120H2 |
Infineon |
Diode |
|
| 3 | IKB03N120H2 |
Infineon Technologies |
Diode |
|
| 4 | IKB06N60T |
Infineon |
IGBT |
|
| 5 | IKB10N60T |
Infineon |
IGBT |
|
| 6 | IKB15N60T |
Infineon |
IGBT |
|
Desde 2024. D4U Semiconductor.
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