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KDV287 |
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| Part Number | KDV287 |
| Manufacturer | KEC |
| Description | SEMICONDUCTOR TECHNICAL DATA UHF SHF TUNING. FEATURES ᴌHigh Capacitance Ratio : C2V/C25V=7.6(Typ.) ᴌLow Series Resistance : rS=1.9ή(Typ.) ᴌExcellent C-V Characteristics, and Small Tracking Error. ᴌUse... |
| Features |
ᴌHigh Capacitance Ratio : C2V/C25V=7.6(Typ.) ᴌLow Series Resistance : rS=1.9ή(Typ.) ᴌExcellent C-V Characteristics, and Small Tracking Error. ᴌUseful for Small Size Tuner.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Reverse Voltage Peak Reverse Voltage Junction Temperature
VR VRM
Tj
Storage Temperature Range
Tstg
RATING 30
35(RL=10kή) 125
-55ᴕ125
UNIT V V ᴱ ᴱ
CATHODE MARK E A K
F L
KDV287
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
B 1
G
H
2 D
MM 1. ANODE 2. CATHODE
J C
I
DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 ... |
| Document |
 KDV287 Data Sheet
PDF 62.67KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KDV287E |
KEC |
VARIABLE CAPACITANCE DIODE |
|
| 2 | KDV202E |
KEC |
SILICON EPITAXIAL PLANAR DIODE |
|
| 3 | KDV214 |
KEC |
VARIABLE CAPACITANCE DIODE |
|
| 4 | KDV214A |
KEC |
VARIABLE CAPACITANCE DIODE |
|
| 5 | KDV214E |
KEC |
VARIABLE CAPACITANCE DIODE |
|
| 6 | KDV214EA |
KEC |
SILICON EPITAXIAL PLANAR DIODE |
|
Desde 2024. D4U Semiconductor.
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