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SMS2009E-C |
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| Part Number | SMS2009E-C |
| Manufacturer | SeCoS |
| Description | The SMS2009E-C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in D... |
| Features |
Reliable and Rugged Green Device Available ESD Protection
MARKING
W28
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size 7 inch
SOT-23
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter Min. Max. 2.70 3.10 2.10 3.00 1.20 1.80 0.89 1.3 1.70 2.3 0.30 0.50
REF.
G H J K L
Millimeter Min. Max.
0 0.18 0.55 REF. 0.08 0.26 0.6 REF. 0.95 BSC.
ORDER INFORMATION
Part Number
Type
SMS2009E-C
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1, VGS=4.5V Pulsed Drain Cu... |
| Document |
 SMS2009E-C Data Sheet
PDF 576.48KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SMS2001-C |
SeCoS |
P-Channel MOSFET |
|
| 2 | SMS2002-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 3 | SMS201 |
MA-COM |
Silicon Schottky Diode |
|
| 4 | SMS2012-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 5 | SMS202 |
MA-COM |
Silicon Schottky Diode |
|
| 6 | SMS202 |
Aeroflex |
Silicon Schottky Diodes |
|
Desde 2024. D4U Semiconductor.
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