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V35PW12 |
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| Part Number | V35PW12 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com V35PW12 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.40 V at IF = 5 A eSMP® Series 1 2 SlimDPAK (T... |
| Features |
• Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 35 A VRRM 120 V IFSM 260 A VF at IF = 35 A (TA = 125 °C) 0.70 V TJ max. 150 °C P... |
| Document |
 V35PW12 Data Sheet
PDF 114.73KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | V35PW45 |
Vishay |
Trench MOS Barrier Schottky Rectifier |
|
| 2 | V35PWM12 |
Vishay |
Trench MOS Barrier Schottky Rectifier |
|
| 3 | V350 |
Micro Quality Semiconductor |
(V35x) RECTIFIER DIODE |
|
| 4 | V350ME01 |
Z-Communications |
OSCILLATOR |
|
| 5 | V350ME01-LF |
Z-Communications |
OSCILLATOR |
|
| 6 | V350ME09-LF |
Z-Communications |
OSCILLATOR |
|
Desde 2024. D4U Semiconductor.
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