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SCT10N120 |
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| Part Number | SCT10N120 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | S(3) AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area ... |
| Features |
• Very tight variation of on-resistance vs. temperature • Very high operating junction temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Solar inverters, UPS • Motor drives • High voltage DC-DC converters • Switch mode power supplies G(1) Description S(3) AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstandi... |
| Document |
 SCT10N120 Data Sheet
PDF 232.26KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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