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STGW40H65DFB-4 |
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| Part Number | STGW40H65DFB-4 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduct... |
| Features |
TO247-4
2 34 1
C(1, TAB)
• Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast soft recovery antiparallel diode • Excellent switching performance thanks to the extra driving kelvin pin G(4) K(3) Applications • Photovoltaic inverters E(2) • High frequency converters NG4K3E2C1_TAB Description This device is an IGBT developed using an advanced proprietary ... |
| Document |
 STGW40H65DFB-4 Data Sheet
PDF 471.95KB |
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Desde 2024. D4U Semiconductor.
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