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STG200M65F2D8AG |
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| Part Number | STG200M65F2D8AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system per... |
| Features |
• AEC-Q101 qualified • Low-loss series IGBT G • Low VCE(sat) = 1.55 V (typ.) at IC = 200 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Maximum junction temperature: TJ = 175 °C E • 6 µs minimum short-circuit withstanding time at TJ = 150 °C EGCD Applications • Main inverter (electric traction) Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and ... |
| Document |
 STG200M65F2D8AG Data Sheet
PDF 301.13KB |
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Desde 2024. D4U Semiconductor.
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