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STGF10H60DF |
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| Part Number | STGF10H60DF |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | E(3) NG1E3C2T These devices are IGBTs developed using an advanced proprietary trench gate field- stop structure. These devices are part of the H series of IGBTs, which represents an optimum compr... |
| Features |
• High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS • PFC Description E(3) NG1E3C2T These devices are IGBTs developed using an advanced proprietary trench gate field- stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient... |
| Document |
 STGF10H60DF Data Sheet
PDF 742.46KB |
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