FGAF30S65AQ |
Part Number | FGAF30S65AQ |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | Field Stop Trench IGBT, 30 A, 650 V FGAF30S65AQ Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for PFC a... |
Features |
• Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.4 V (Typ.) @ IC = 30 A • 100% of the Parts Tested for ILM (Note 1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • IGBT with Monolithic Reverse Conducting Diode • This Device is Pb−Free and is RoHS Compliant Typical Applications • PFC, Welder MAXIMUM RATINGS Rating Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 650 V VGES ±20 ... |
Document |
FGAF30S65AQ Data Sheet
PDF 296.86KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FGAF20N60SMD |
Fairchild Semiconductor |
Field Stop IGBT | |
2 | FGAF20S65AQ |
ON Semiconductor |
IGBT | |
3 | FGAF40N60SMD |
Fairchild Semiconductor |
Field Stop IGBT | |
4 | FGAF40N60UF |
Fairchild Semiconductor |
Ultrafast IGBT | |
5 | FGAF40N60UFD |
Fairchild Semiconductor |
Ultrafast IGBT | |
6 | FGAF40S65AQ |
ON Semiconductor |
IGBT |