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SCTW100N65G2AG |
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| Part Number | SCTW100N65G2AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and ... |
| Features |
Order code SCTW100N65G2AG
VDS 650 V
RDS(on) max. 26 mΩ
ID 100 A
HiP247
3 2 1
• AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB) Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resista... |
| Document |
 SCTW100N65G2AG Data Sheet
PDF 227.69KB |
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Desde 2024. D4U Semiconductor.
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