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FDG6322C |
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| Part Number | FDG6322C |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is ... |
| Features |
N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V, RDS(ON) = 5.0 Ω @ VGS= 2.7 V.
P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V, RDS(ON) = 1.5 Ω @ VGS= -2.7V.
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
SC70-6
SOT-23
SuperSOTTM-6
SOT-8
SO-8
SOIC-14
S2 G2 D1
pin 1
SC70-6 Mark: .22
D2 G1 S1
16
Q1
25
Q2
34
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
N-Channel
VDSS Drain-Source Voltage VGSS Gate-Source ... |
| Document |
 FDG6322C Data Sheet
PDF 250.48KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDG6322C |
Fairchild Semiconductor |
Dual N & P Channel Digital FET |
|
| 2 | FDG6320C |
ON Semiconductor |
Dual-Channel Digital FET |
|
| 3 | FDG6320C |
Fairchild Semiconductor |
Dual N & P Channel Digital FET |
|
| 4 | FDG6321C |
ON Semiconductor |
Dual-Channel Digital FET |
|
| 5 | FDG6321C |
Fairchild Semiconductor |
Dual N & P Channel Digital FET |
|
| 6 | FDG6323L |
ON Semiconductor |
Integrated Load Switch |
|
Desde 2024. D4U Semiconductor.
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