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FQP4N65 |
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| Part Number | FQP4N65 |
| Manufacturer | Oucan Semi |
| Description | Product Summary The FQP4N65 & FQPF4N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC appli... |
| Features |
5°C Power Dissipation B Derate above 25oC
PD
104 0.83
35 0.28
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
FQP4N60 65 0.5
FQPF4N60 65 --
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1.2
3.6
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C/W °C/W °C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Param... |
| Document |
 FQP4N65 Data Sheet
PDF 290.40KB |
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Desde 2024. D4U Semiconductor.
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