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BU202DL |
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| Part Number | BU202DL |
| Manufacturer | Jingdao |
| Description | R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU202DL Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast，etc... |
| Features |
Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed
3．PACKAGE
1 VD
TO-92
4．Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25℃ Tc=25℃
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
VCBO VCEO VEBO
IC
Ptot
Tj Tstg
400 200 9 1.5 0.8 15 150 -55～150
V V V A... |
| Document |
 BU202DL Data Sheet
PDF 111.04KB |
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