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STGWA60V60DWFAG |
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| Part Number | STGWA60V60DWFAG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and s... |
| Features |
G(1)
C(2, TAB)
E(3)
Product status link STGWA60V60DWFAG
• AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tail-less switching current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient • Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration Applications • Automotive converters • Totem-pole power factor correction NG1E3C2T Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is... |
| Document |
 STGWA60V60DWFAG Data Sheet
PDF 615.04KB |
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Desde 2024. D4U Semiconductor.
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