MTB010N06RI3 |
Part Number | MTB010N06RI3 |
Manufacturer | CYStech |
Description | CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB010N06RI3 Spec. No. : C016J3 Issued Date : 2018.05.24 Revised Date : Page No. : 1/ 8 Features Low On Resistance Simple Drive ... |
Features |
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 60V 43A 10.7 mΩ(typ) 16.9 mΩ(typ) Symbol MTB010N06RI3 Outline TO-251 G:Gate D:Drain S:Source G DS Ordering Information Device Package Shipping MTB010N06RI3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec... |
Document |
MTB010N06RI3 Data Sheet
PDF 599.54KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MTB010N06RH8 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTB010N06RJ3 |
CYStech |
N-Channel MOSFET | |
3 | MTB010N06I3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
4 | MTB010A03H8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
5 | MTB010A06RH8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
6 | MTB011 |
Shindengen Electric |
High Output Interface Driver ICs |