Busque con el número de pieza junto con el fabricante o la descripción
C3M0016120K |
Click to view a larger image
| Part Number | C3M0016120K |
| Manufacturer | CREE |
| Description | VDS 1200 V C3M0016120K ID @ 25˚C 115 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 16 mΩ N-Channel Enhancement Mode Features Package • 3rd generation Si... |
| Features |
Package
• 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • Solar inverters • EV motor drive • High voltage ... |
| Document |
 C3M0016120K Data Sheet
PDF 1.03MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | C3M0016120D |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 2 | C3M0016120D |
CREE |
Silicon Carbide Power MOSFET |
|
| 3 | C3M0016120K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 4 | C3M0015065D |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 5 | C3M0015065K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 6 | C3M0021120D |
CREE |
Silicon Carbide Power MOSFET |
|
Desde 2024. D4U Semiconductor.
|