RD04LUS2 |
Part Number | RD04LUS2 |
Manufacturer | Mitsubishi |
Description | RD04LUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. FEATURES High power gain and High Efficiency. Pout=4Wtyp, Drain Effi. =65%typ @ Vds=3.6V, Idq=... |
Features |
High power gain and High Efficiency. Pout=4Wtyp, Drain Effi. =65%typ @ Vds=3.6V, Idq=280mA, Pin=0.4W, f=527MHz Integrated gate protection diode.
OUTLINE DRAWING
APPLICATION
For output stage of high power amplifiers in VHF/UHF-band mobile radio sets.
RoHS COMPLIANT
RD04LUS2-501, T512, T514 is EU RoHS compliant.
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
RATINGS
VDSS Drain to source voltage
VGS=0V
25
VGSS Gate to source voltage
VDS=0V
-5/+10
Pch*
Channel dissipation
Tc=25°C
46
Pin Input Power
Zg=Zl=50
0.8
Pout
Output Power
Zg=Zl... |
Document |
RD04LUS2 Data Sheet
PDF 1.04MB |
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