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FQH44N10 |
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| Part Number | FQH44N10 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ... |
| Features |
• 48 A, 100 V, RDS(on) = 39 m (Max.) @ VGS = 10 V, ID = 24 A • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ. 85 pF) • 100% Avalanche Tested • 175C Maximum Junction Temperature Rating D G D S TO-247 Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note... |
| Document |
 FQH44N10 Data Sheet
PDF 1.22MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQH44N10 |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FQH44N10_F133 |
Fairchild Semiconductor |
MOSFET |
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| 3 | FQH140N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET |
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| 4 | FQH18N50V2 |
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500V N-Channel MOSFET |
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| 5 | FQH35N40 |
Fairchild Semiconductor |
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| 6 | FQH70N10 |
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MOSFET |
|
Desde 2024. D4U Semiconductor.
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