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STGWA15M120DF3 |
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| Part Number | STGWA15M120DF3 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to ma... |
| Features |
• 10 µs of short-circuit withstand time • VCE(sat) = 1.85 V (typ.) @ IC = 15 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and fast recovery antiparallel diode Applications • Industrial drives • UPS • Solar • Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sa... |
| Document |
 STGWA15M120DF3 Data Sheet
PDF 1.02MB |
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Desde 2024. D4U Semiconductor.
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